Home > Mosfet Power Transistor >

AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

Product Categories

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Now

AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

Name: AP2N1K2EN1 IC Chips SOT723 015W 800mA MOSFET Transistor
Brand: Original brand
Price: 1 USD

Brand Name : Original brand

Model Number : AP2N1K2EN1

Certification : RoHS、SGS

Place of Origin : China

MOQ : Negotiable

Price : Negotiate

Payment Terms : L/C T/T Western Union

Supply Ability : 10,000/Month

Delivery Time : 4~5 week

Packaging Details : Carton Box

Supplier Type : Original manufacturer, Odm, Agency, Retailer

Package Type : SOT-723(N1)

D/C : Newest

Description : Transistor

Contact Now

MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips

Description

AP2N1K2E series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

The SOT-723 Package with very small footprint is suitable for all commercial-industrial surface mount application.

Notes:

1.Pulse width limited by Max. junction temperature.
2.Pulse test

3.Surface mounted on min. copper pad of FR4 board

This product is sensitive to electrostatic discharge, please handle with care.

This product is not authorized to be used as a critical component of a life support system or other similar systems.

APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this agreement, nor shall it assign any license under its patent rights or assign the rights of others.

APEC reserves the right to make changes to any product in this Agreement without notice to improve reliability, function or design.

Absolute Maximum Ratings@Tj=25°C(unless otherwise specified)

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	+8	V
I_D@T_A=25℃	Drain Current³, V_GS @ 2.5V	200	mA
IDM	Pulsed Drain Current¹	400	mA
I_S@T_A=25℃	Source Current (Body Diode)	125	mA
ISM	Pulsed Source Current¹(Body Diode)	800	mA
P_D@T_A=25℃	Total Power Dissipation	0.15	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Thermal Data

Symbol	Parameter	Value	Unit
Rthj-a	Maximum Thermal Resistance, Junction-ambient³	833	℃/W

AP2N1K2EN

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
BVDSS	Drain-Source Breakdown Voltage	V_GS=0V, I_D=250uA	20	-	-	V
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=2.5V, I_D=200mA	-	-	1.2	Ω
		V_GS=1.8V, I_D=200mA	-	-	1.4	Ω
		V_GS=1.5V, I_D=40mA	-	-	2.4	Ω
		V_GS=1.2V, I_D=20mA	-	-	4.8	Ω
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_D=1mA	0.3	-	1	V
gfs	Forward Transconductance	V_DS=10V, I_D=200mA	-	1.8	-	S
IDSS	Drain-Source Leakage Current	V_DS=16V, V_GS=0V	-	-	10	uA
IGSS	Gate-Source Leakage	V_GS=+8V, V_DS=0V	-	-	+30	uA
Q_g	Total Gate Charge	I_D=200mA V_DS=10V V_GS=2.5V	-	0.7	-	nC
Qgs	Gate-Source Charge		-	0.2	-	nC
Qgd	Gate-Drain ("Miller") Charge		-	0.2	-	nC
td(on)	Turn-on Delay Time	V_DS=10V	-	2	-	ns
t_r	Rise Time	I_D=150mA	-	10	-	ns
td(off)	Turn-off Delay Time	R_G=10Ω	-	30	-	ns
t_f	Fall Time	.V_G_S=5V	-	16	-	ns
Ciss	Input Capacitance	V_GS=0V V_DS=10V f=1.0MHz	-	44	-	pF
Coss	Output Capacitance		-	14	-	pF
Crss	Reverse Transfer Capacitance		-	10	-	pF

Source-Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VSD	Forward On Voltage²	I_S=0.13A, V_GS=0V	-	-	1.2	V

Product Tags: